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HUF76129价格
参考价格：￥1.9500
型号：HUF76129S3ST 品牌：INTERSIL 备注：这里有HUF76129多少钱，2025年最近7天走势，今日出价，今日竞价，HUF76129批发/采购报价，HUF76129行情走势销售排行榜，HUF76129报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 |   | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | |
HUF76129产品属性
- 类型
描述
- 型号
HUF76129
- 功能描述
MOSFET 20a 30V N-Ch Logic Level 0.016Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD |
NEW |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ONSEMI/安森美 |
25+ |
TO-220 |
20300 |
ONSEMI/安森美原装特价HUF76129P3即刻询购立享优惠#长期有货 |
|||
INTERSI |
23+ |
TO220 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
INTERSIL |
24+ |
NA/ |
1494 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
|||
INTERSIL |
23+ |
TO220 |
5000 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INTERSIL |
23+ |
TO-220AB |
50000 |
全新原装正品现货,支持订货 |
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2013-1-6
DdatasheetPDF页码索引
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