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HUF76129价格
参考价格：￥1.9500
型号：HUF76129S3ST 品牌：INTERSIL 备注：这里有HUF76129多少钱，2026年最近7天走势，今日出价，今日竞价，HUF76129批发/采购报价，HUF76129行情走势销售排行榜，HUF76129报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 |   | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | |
HUF76129产品属性
- 类型
描述
- 型号
HUF76129
- 功能描述
MOSFET 20a 30V N-Ch Logic Level 0.016Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220AB |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI |
25+ |
TO-220AB |
20948 |
样件支持,可原厂排单订货! |
|||
ONSEMI/安森美 |
25+ |
TO-220 |
20300 |
ONSEMI/安森美原装特价HUF76129P3即刻询购立享优惠#长期有货 |
|||
INTERSIL |
25+ |
TO252 |
37500 |
原装正品现货,价格有优势! |
|||
INTERSIL |
25+ |
TO220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
INTERSIL |
2025+ |
TO-220AB |
3550 |
全新原厂原装产品、公司现货销售 |
|||
INTERSIL |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INTERSIL |
TO-220AB |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
INTERSIL |
0014+ |
TO220-3 |
1500 |
原装现货海量库存欢迎咨询 |
HUF76129规格书下载地址
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特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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