位置：首页 > IC中文资料第156页 > HUF76113
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | FAIRCHILD 仙童半导体 |   | ||
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | INTERSIL | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | FAIRCHILD 仙童半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | INTERSIL | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | FAIRCHILD 仙童半导体 | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | RENESAS 瑞萨 | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | ONSEMI 安森美半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | ONSEMI 安森美半导体 | |
HUF76113产品属性
- 类型
描述
- 型号
HUF76113
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
SOT-223-4 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
SOT-223-4 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
N/A |
2026+ |
SOT223 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INSL |
00+ |
SOT223 |
3292 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
N/A |
24+ |
SOT223 |
990000 |
明嘉莱只做原装正品现货 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
34835 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
INSL |
23+ |
SOT223 |
48237 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAI |
25+23+ |
SOT223 |
72204 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INSL |
22+ |
SOT223 |
20000 |
公司只做原装 品质保障 |
|||
FC |
05+ |
原厂原装 |
21716 |
只做全新原装真实现货供应 |
HUF76113规格书下载地址
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2013-1-6
DdatasheetPDF页码索引
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