位置：首页 > IC中文资料第156页 > HUF76113
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Fairchild 仙童半导体 |   | ||
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Intersil | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | Intersil | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | Fairchild 仙童半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Intersil | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Fairchild 仙童半导体 | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | RENESAS 瑞萨 | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | ONSEMI 安森美半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | ONSEMI 安森美半导体 | |
HUF76113产品属性
- 类型
描述
- 型号
HUF76113
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
SOT223 |
990000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
6050 |
原装现货,当天可交货,原型号开票 |
|||
INSL |
22+ |
SOT223 |
20000 |
公司只做原装 品质保障 |
|||
FAI |
25+23+ |
SOT223 |
72204 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
onsemi(安森美) |
24+ |
SOT-223-4 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FC |
05+ |
原厂原装 |
21716 |
只做全新原装真实现货供应 |
|||
FAIRCHIL |
2023+ |
SOT-223 |
50000 |
原装现货 |
|||
ON/安森美 |
23+ |
SOT223 |
6000 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
21+ |
SOT-223 |
10000 |
原装现货假一罚十 |
|||
FAIRCHILD |
1709+ |
SOT-223 |
32500 |
普通 |
HUF76113芯片相关品牌
HUF76113规格书下载地址
HUF76113参数引脚图相关
- igzo
- igbt驱动电路
- IGBT模块
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- HUM-70
- HUM-40F
- HUM-40
- HUM3004
- HUM3003
- HUM3002
- HUM2020
- HUM2015
- HUM2010
- HUM2001
- HUL7207
- HUL7203
- HUL7202
- HUL7001
- HUL6273
- HUKIT40
- HUKIT30
- HUKIT20
- HUGD-50
- HUGD50
- HUF76129S3
- HUF76129P3
- HUF76129D3ST
- HUF76129D3S
- HUF76129D3
- HUF76122P3
- HUF76121SK8T
- HUF76121SK8
- HUF76121S3ST
- HUF76121S3S
- HUF76121S3
- HUF76121P3
- HUF76121D3ST
- HUF76121D3S
- HUF76121D3
- HUF76113T3ST
- HUF76113SK8T
- HUF76113SK8
- HUF76113DK8T
- HUF76113DK8
- HUF76112SK8T
- HUF76112SK8
- HUF76107P3_R4782
- HUF76107P3
- HUF76107D3ST
- HUF76107D3S
- HUF76107D3
- HUF76105SK8T
- HUF76105SK8
- HUF76105DK8T
- HUF76105DK8
- HUF76013P3
- HUF76013D3ST
- HUF76013D3S
- HUF76009P3
- HUF76009D3ST
- HUF76009D3S
- HUF75945S3ST
- HUF75945P3
- HUF75945G3
- HU968
- HU664DS
- HU663DS
- HU661DS
- HU603AL
- HU553
- HU551
- HU465
- HU464DS
- HU464
- HU463
- HU462EI
- HU462DS
- HU462
- HU368R
- HU368
- HU367R
- HU367
- HU366SS
- HU366R
HUF76113数据表相关新闻
HUFA76645S3ST
HUFA76645S3ST
2021-11-9HUF76645S3S
HUF76645S3S
2021-11-9HUF75645S3ST
HUF75645S3ST
2021-11-9HUF75645S3ST
HUF75645S3ST
2021-11-9HTU21D温度传感器
HTU21D 原装正品
2019-4-22HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
