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HUF76价格
参考价格：￥1.9500
型号：HUF76129S3ST 品牌：INTERSIL 备注：这里有HUF76多少钱，2026年最近7天走势，今日出价，今日竞价，HUF76批发/采购报价，HUF76行情走势销售排行榜，HUF76报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：HUF76629D3ST；N-Channel Logic Level UltraFET짰 Power MOSFET 100V, 20A, 52m廓 文件：550.98 Kbytes Page：7 Pages | ONSEMI 安森美半导体 |   | ||
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | INTERSIL | | ||
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | FAIRCHILD 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | INTERSIL | | ||
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | FAIRCHILD 仙童半导体 | | ||
20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | INTERSIL | | ||
20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | FAIRCHILD 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | FAIRCHILD 仙童半导体 | | ||
20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs The HUF76013 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Features • 20A | INTERSIL | | ||
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | FAIRCHILD 仙童半导体 | | ||
5.5A, 30V, 0.050 Ohm, N-Channel, Logic This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | FAIRCHILD 仙童半导体 | | ||
5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | FAIRCHILD 仙童半导体 | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | INTERSIL | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | FAIRCHILD 仙童半导体 | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | INTERSIL | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses, thereby increasing the overall system efficiency. Features • | INTERSIL | | ||
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | FAIRCHILD 仙童半导体 | | ||
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | INTERSIL | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | FAIRCHILD 仙童半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | FAIRCHILD 仙童半导体 | | ||
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | INTERSIL | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | BYCHIP 百域芯 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | FAIRCHILD 仙童半导体 | | ||
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | | ||
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | FAIRCHILD 仙童半导体 | | ||
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | INTERSIL | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | INTERSIL | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | FAIRCHILD 仙童半导体 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | FAIRCHILD 仙童半导体 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | INTERSIL | | ||
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | FAIRCHILD 仙童半导体 | | ||
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | INTERSIL | | ||
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | INTERSIL | |
HUF76产品属性
- 类型
描述
- 型号
HUF76
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
onsemi |
25+ |
TO-252AA |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
FSC/ON |
23+ |
原包装原封□□ |
1677 |
原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存 |
|||
FAIRCHILD |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
仙童 |
06+ |
TO-220 |
5000 |
原装库存 |
|||
FAIRCHILD |
24+ |
TO-220 |
8866 |
||||
onsemi |
25+ |
TO-252AA |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FSC |
17+ |
TO-220 |
6200 |
HUF76规格书下载地址
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HUF76数据表相关新闻
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2019-4-22HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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