位置：首页 > IC中文资料第745页 > HUF76107D3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | Fairchild 仙童半导体 |   | |
HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | Intersil | | |
HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | |
HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | |
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | Intersil | | ||
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and t | Fairchild 仙童半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | |
HUF76107D3产品属性
- 类型
描述
- 型号
HUF76107D3
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FRIRCHILD |
2016+ |
SOT-252 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
24+ |
TO-252AA |
5000 |
全新原装正品,现货销售 |
|||
FAIRCHILD/仙童 |
00+ |
TO-252 |
3844 |
||||
FAIRCHILD |
2025+ |
TO252 |
3875 |
全新原厂原装产品、公司现货销售 |
|||
INTERSIL |
25+ |
TO252 |
15000 |
全新原装现货,价格优势 |
|||
FAI |
TO2522 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ONSEMI/安森美 |
22+ |
TO-252 |
25000 |
原装正品支持实单 |
|||
INFINEON |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
24+ |
SOT-252 |
25000 |
一级专营品牌全新原装热卖 |
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HUF76107D3规格书下载地址
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特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
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