75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

isc N-Channel MOSFET Transistor

• DESCRIPTION • Drain Current: ID= 75A@ TC=25℃ • Drain Source Voltage : VDSS= 55V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Designed for high current, high speed switching, switch mode power supplies.

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

MOSFET ??Power, N-Channel, UltraFET 55 V, 75 A, 7 m

文件：603.64 Kbytes Page：16 Pages