CMOS 4K 3-Wire Serial EEPROM

General Description The HT93LC66 is a 4K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 4096 bits of memory are organized into 256 words of 16 bits each when the ORG pin is connected to VCC or organized into

CMOS 4K 3-Wire Serial EEPROM

General Description The HT93LC66 is a 4K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 4096 bits of memory are organized into 256 words of 16 bits each when the ORG pin is connected to VCC or organized into

4K 3-Wire CMOS Serial EEPROM

General Description The HT93LC66 is a 4K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 4096 bits of memory are organized into 256 words of 16 bits each when the ORG pin is connected to VCC or organized into

CMOS 4K 3-Wire Serial EEPROM

文件：103.7 Kbytes Page：12 Pages

4K 3-Wire CMOS Serial EEPROM

CMOS 4K 3-Wire Serial EEPROM

General Description The HT93LC66 is a 4K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 4096 bits of memory are organized into 256 words of 16 bits each when the ORG pin is connected to VCC or organized into

CMOS 4K 3-Wire Serial EEPROM

General Description The HT93LC66 is a 4K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 4096 bits of memory are organized into 256 words of 16 bits each when the ORG pin is connected to VCC or organized into

CMOS 4K 3-Wire Serial EEPROM

文件：103.7 Kbytes Page：12 Pages

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te