4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

4,096-Bit Serial Electrically Erasable PROM

Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Features • Low power CMOS Te

1K/2K/4K 2.0V Microwire Serial EEPROM

Description: The Microchip Technology Inc. 93LC46/56/66 are 1K, 2K and 4K low voltage serial Electrically Erasable PROMs (EEPROM). The device memory is configured as x8 or x16 bits depending on the external logic of levels of the ORG pin. Advanced CMOS technology makes these devices ideal for l

Lowpower 3-wire non-volatile memories

INTRODUCTION The Microchip Technology Inc. 93LC56/66 are low-power 3-wire non-volatile memories and are suitable for many embedded system code and data storage applications. These devices are easily interfaced to most microcontrollers in todays market place, but Microchip’s 8-bit RISC series PIC1

1K/2K/4K 2.5V Microwire Serial EEPROM

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1K/2K/4K 2.5V Microwire Serial EEPROM

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1K/2K/4K 2.5V Microwire Serial EEPROM

文件：328.77 Kbytes Page：20 Pages