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HSC价格
参考价格:¥48.0249
型号:HSC100-100R 品牌:TE 备注:这里有HSC多少钱,2025年最近7天走势,今日出价,今日竞价,HSC批发/采购报价,HSC行情走势销售排行榜,HSC报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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HSC | TruStability® Board Mount Pressure Sensors FeaturesandBenefits Industry-leadingaccuracy Extremelytightaccuracyof±0.25FSSBFSL(FullScaleSpanBestFitStraight Line)reducessoftwareneededtocorrectsysteminaccuracies,minimizingsystem designtime: •Avoidsadditionalcustomercalibration. •Helpstoimprovesystemeffic | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际有限公司 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SMT and DIP,1 psi to 150 psi 文件:1.76269 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | High Temperature and Large Size Multilayer Ceramic Chip Capacitors 文件:219.68 Kbytes Page:4 Pages | HOLYSTONECAPSHolyStone International 禾伸堂禾伸堂企业股份有限公司 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,60 mbar to,10 bar 文件:1.97868 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,1 psi to 150 psi 文件:1.92099 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SMT and DIP,60 mbar to 10 bar 文件:1.83459 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,60 mbar to,10 bar 文件:1.96219 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,1 psi to 150 psi 文件:1.92223 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Digital output,SMT and DIP,1 psi to 150 psi 文件:1.84096 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Digital output,SMT and DIP,60 mbar to 10 bar 文件:1.88598 Mbytes Page:12 Pages | HoneywellHoneywell Solid State Electronics Center 霍尼韦尔霍尼韦尔国际 | ||
HSC | SC Type Fiber Optic Connectors 文件:759.08 Kbytes Page:21 Pages | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | ||
HEAT SINK CLIP FEATURES •forusewithHSE-B20XandHSE-B20X-01series •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •forusewithHSE-BX-035Hseries •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •forusewithHSE-BX-035Hseries •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •forusewithHSE-B20XandHSE-B20X-01series •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •clipforHSS01-B20-CP •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •clipforHSS08-B18-CP •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •usewithheatsinkHSE06-503045,HSE07-753045, HSE08-505028,HSE09-755028 •aluminumalloy | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •usewithheatsinkHSE06-503045,HSE07-753045, HSE08-505028,HSE09-755028 •aluminumalloy | SAMESKY Same Sky Devices | |||
HEAT SINK CLIP FEATURES •usewithTO-220orTO-218heatsink •steel | SAMESKY Same Sky Devices | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
HEAT SINK CLIP FEATURES •usewithTO-220orTO-218heatsink •steel | SAMESKY Same Sky Devices | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Lowcapacitance.(C=2.0pFmax) •Shortreverserecoverytime.(trr=3.0nsmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Lowcapacitance.(C=2.0pFmax) •Shortreverserecoverytime.(trr=3.0nsmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High Speed Switching Diodes Features ●Lowcapacitance.(C=2.0pFmax) ●Shortreverserecoverytime.(trr=3.0nsmax) ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
HEAT SINK CLIP FEATURES •clipforHSS29-302513P •stainlesssteel •cleanfinish | SAMESKY Same Sky Devices | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC1959isdesignedforaudiofrequencyLowpoweramplifierapplications. Features •ExcellenthFELinearity | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC1959YisdesignedforaudiofrequencyLowpoweramplifierapplications. Features •ExecellenthFElinearity •ComplementarytoHSA562 | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC2228Yisdesignedforhighvoltageamplifierapplications. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description Lownoiseaudioamplifierapplications | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
Silicon Schottky Barrier Diode Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Schottky Barrier Diode for High Speed Switching Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Silicon Schottky Barrier Diode Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SILICON SCHOTTKY BARRIER DIODE Features •Lowreversecurrent,lowcapacitance •Ultrasmallflatpackageissuitableforsurfacemountdesign | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
Low Forward Voltage Drop, Guard Ring Constrcition For Transient FEATURES LowForwardVoltageDrop. GuardRingConstructionForTransientProtection. NegligibleReverseRecoveryTime. LowReverseCapacitance. APPLICATIONS Schottybarrierswitching. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
PNP SILICON TRANSISTOR APPLICATIONS ColorTVChromaOutputApplications | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC2625isdesignedfortriplediffusedplanertypehighvoltage,highspeedswitchingapplications. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Audiofrequencypoweramplifier,highfrequencypoweramplifier. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
Silicon Schottky Barrier Diode for Mixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Schottky Barrier Diode Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
Silicon Schottky Barrier Diode for Mixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Schottky Barrier Diode for Mixer Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch Features •Lowforwardresistance.(rf=0.7max) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch Features •Lowforwardresistance.(rf=0.7Ωmax) •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Silicon Schottky Barrier Diode Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon Schottky Barrier Diode for Detector SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION Features •Lowforwardvoltage,LowcapacitanceandHighdetectionsensitivity. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Features •High–DefinitionCRTDisplayVideoOutputApplications •HighBreakdownVoltage:BVCEO=300V | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description High–definitionCRTdisplayvideooutput,wide-bandamplifier. Features •HighfT:500MHz •HighBreakdownVoltage:BVCEO=120Vmin •SmallReverseTransferCapacitance&ExcellentHFResponse:Cre=1.7pF | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description High-definitionCRTdisplayvideooutput,wide-bandamplifierapplications. Features •HighfT:fT=500MHz •Highbreakdownvoltage:VCEO=120Vmin •Smallreversetransfercapacitance | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC4242isdesignedfortriplediffusedplanartypeandhighspeedswitchingapplications. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN SILICON BIPOLAR TRANSISTOR Description TheHSC5094isaNPNSiliconTransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Features •LowNoiseandHighGain:NF=1.4dB,Ga=12dB@VCE=2V,Ic=4.2mA,f=0.9GHz •HighPowerGain:MAG=13.5dB@VCE=5V,Ic=4.5mA,f=0.9GHz Applications •Lownoiseandhighga | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
Aluminium Housed Power Resistors TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC945isdesignedforusingdriverstageofAPamplifierandlowspeedswitchingapplications. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHSC945isdesignedforusingdriverstageofAFamplifierandlowspeedswitchingapplications. | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 |
HSC产品属性
- 类型
描述
- 型号
HSC
- 制造商
HONEYWELL
- 制造商全称
Honeywell Solid State Electronics Center
- 功能描述
TruStability silicon Pressure
- Sensors
HSC Series-High Accuracy +-1% total Error band,Analog output,SIP,1 psi to 150 psi
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOD523 |
32000 |
RENESAS/瑞萨全新特价HSC278TRF-E即刻询购立享优惠#长期有货 |
|||
ARLITECH |
24+ |
NA/ |
645 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ARLITECH |
24+ |
0603 |
20000 |
全新原装数量均有多电话咨询 |
|||
HY-SINCERITY |
1190 |
全新原装!优势库存热卖中! |
|||||
ALPS |
2430+ |
LGA |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
214 |
24+ |
42*27*12 |
500 |
214所产品在售 |
|||
AVAGOTECHNOLOGIES |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
|||
HONEYWELL |
sensorn |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
HONEYWELL |
24+ |
SMD |
750 |
代理原装现货,价格优势。 |
|||
TE |
4500 |
一级代理原装正品,可开原型号13 |
HSC规格书下载地址
HSC参数引脚图相关
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HSC数据表相关新闻
HSM4204
HSM4204,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-2-16HSF-48-19-BF
HSF系列散热器/风扇组合 Wakefield-Vette的散热器/风扇组合设计用于许多行业的气流应用
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2019-8-2HS9-4424BRH-双抗辐射,非逆变电源的MOSFET驱动器
双抗辐射,非反相功率MOSFET驱动器辐射硬化的Hs4424RH和HS-4424BRH是非相,双,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协,4
2013-3-2HS9-4423BRH-抗辐射双通道,逆变电源的MOSFET驱动器
抗辐射双通道,逆变电源MOSFET驱动器辐射硬化的Hs4423RH和房协,4423BRH是反转,双通道,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协
2013-3-2HS9S-117RH-8-抗辐射可调节正电压稳压器
硬化HS-117RH辐射是一种积极的调节电压线性稳压器高达40VDC的经营能力。该电压调节从1.2V至37V的两个外部电阻。该设备的采购能够从50mA至1.25APEAK(分钟)。保护是由片上热关断和输出电流限制电路。Intersil的HS-117RH比其他行业的优势标准类型的电路,以减少注册成立在设备的辐射和温度稳定性的影响。低剂量率可忽略不计的灵敏度达到通过使用垂直晶体管几何。与介质隔离Intersil的构造拉德硬硅门(RSG)的过程中,HS-117RH都难单事件闭锁,并经过特别设计,提供高度可靠的性能在恶劣的辐射环境。特点•电甄
2013-1-28
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