HSC价格

参考价格:¥48.0249

型号:HSC100-100R 品牌:TE 备注:这里有HSC多少钱,2025年最近7天走势,今日出价,今日竞价,HSC批发/采购报价,HSC行情走势销售排行榜,HSC报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HSC

TruStability® Board Mount Pressure Sensors

FeaturesandBenefits Industry-leadingaccuracy Extremelytightaccuracyof±0.25FSSBFSL(FullScaleSpanBestFitStraight Line)reducessoftwareneededtocorrectsysteminaccuracies,minimizingsystem designtime: •Avoidsadditionalcustomercalibration. •Helpstoimprovesystemeffic

HONEYWELL-ACCHoneywell Accelerometers

霍尼韦尔霍尼韦尔国际有限公司

HONEYWELL-ACC
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SMT and DIP,1 psi to 150 psi

文件:1.76269 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

High Temperature and Large Size Multilayer Ceramic Chip Capacitors

文件:219.68 Kbytes Page:4 Pages

HOLYSTONECAPSHolyStone International

禾伸堂禾伸堂企业股份有限公司

HOLYSTONECAPS
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,60 mbar to,10 bar

文件:1.97868 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,1 psi to 150 psi

文件:1.92099 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SMT and DIP,60 mbar to 10 bar

文件:1.83459 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,60 mbar to,10 bar

文件:1.96219 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Analog output,SIP,1 psi to 150 psi

文件:1.92223 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Digital output,SMT and DIP,1 psi to 150 psi

文件:1.84096 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1 total Error band,Digital output,SMT and DIP,60 mbar to 10 bar

文件:1.88598 Mbytes Page:12 Pages

HoneywellHoneywell Solid State Electronics Center

霍尼韦尔霍尼韦尔国际

Honeywell
HSC

SC Type Fiber Optic Connectors

文件:759.08 Kbytes Page:21 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

HIROSE

HEAT SINK CLIP

FEATURES •forusewithHSE-B20XandHSE-B20X-01series •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •forusewithHSE-BX-035Hseries •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •forusewithHSE-BX-035Hseries •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •forusewithHSE-B20XandHSE-B20X-01series •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •clipforHSS01-B20-CP •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •clipforHSS08-B18-CP •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •usewithheatsinkHSE06-503045,HSE07-753045, HSE08-505028,HSE09-755028 •aluminumalloy

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •usewithheatsinkHSE06-503045,HSE07-753045, HSE08-505028,HSE09-755028 •aluminumalloy

SAMESKY

Same Sky Devices

SAMESKY

HEAT SINK CLIP

FEATURES •usewithTO-220orTO-218heatsink •steel

SAMESKY

Same Sky Devices

SAMESKY

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

HEAT SINK CLIP

FEATURES •usewithTO-220orTO-218heatsink •steel

SAMESKY

Same Sky Devices

SAMESKY

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Lowcapacitance.(C=2.0pFmax) •Shortreverserecoverytime.(trr=3.0nsmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Lowcapacitance.(C=2.0pFmax) •Shortreverserecoverytime.(trr=3.0nsmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High Speed Switching Diodes

Features ●Lowcapacitance.(C=2.0pFmax) ●Shortreverserecoverytime.(trr=3.0nsmax) ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

HEAT SINK CLIP

FEATURES •clipforHSS29-302513P •stainlesssteel •cleanfinish

SAMESKY

Same Sky Devices

SAMESKY

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC1815isdesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC1959isdesignedforaudiofrequencyLowpoweramplifierapplications. Features •ExcellenthFELinearity

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC1959YisdesignedforaudiofrequencyLowpoweramplifierapplications. Features •ExecellenthFElinearity •ComplementarytoHSA562

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC2228Yisdesignedforhighvoltageamplifierapplications.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description Lownoiseaudioamplifierapplications

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

Silicon Schottky Barrier Diode

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Schottky Barrier Diode for High Speed Switching

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Silicon Schottky Barrier Diode

Features •Lowreversecurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SILICON SCHOTTKY BARRIER DIODE

Features •Lowreversecurrent,lowcapacitance •Ultrasmallflatpackageissuitableforsurfacemountdesign

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

Low Forward Voltage Drop, Guard Ring Constrcition For Transient

FEATURES LowForwardVoltageDrop. GuardRingConstructionForTransientProtection. NegligibleReverseRecoveryTime. LowReverseCapacitance. APPLICATIONS Schottybarrierswitching.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

PNP SILICON TRANSISTOR

APPLICATIONS ColorTVChromaOutputApplications

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

华汕电子器件汕头华汕电子器件有限公司

Huashan

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC2625isdesignedfortriplediffusedplanertypehighvoltage,highspeedswitchingapplications.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Audiofrequencypoweramplifier,highfrequencypoweramplifier.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

Silicon Schottky Barrier Diode for Mixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Schottky Barrier Diode

Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Silicon Schottky Barrier Diode for Mixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Schottky Barrier Diode for Mixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features •Lowforwardresistance.(rf=0.7max) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

Features •Lowforwardresistance.(rf=0.7Ωmax) •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Silicon Schottky Barrier Diode

Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

Silicon Schottky Barrier Diode for Detector

SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION

Features •Lowforwardvoltage,LowcapacitanceandHighdetectionsensitivity. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

NPN EPITAXIAL PLANAR TRANSISTOR

Features •High–DefinitionCRTDisplayVideoOutputApplications •HighBreakdownVoltage:BVCEO=300V

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description High–definitionCRTdisplayvideooutput,wide-bandamplifier. Features •HighfT:500MHz •HighBreakdownVoltage:BVCEO=120Vmin •SmallReverseTransferCapacitance&ExcellentHFResponse:Cre=1.7pF

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description High-definitionCRTdisplayvideooutput,wide-bandamplifierapplications. Features •HighfT:fT=500MHz •Highbreakdownvoltage:VCEO=120Vmin •Smallreversetransfercapacitance

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC4242isdesignedfortriplediffusedplanartypeandhighspeedswitchingapplications.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN SILICON BIPOLAR TRANSISTOR

Description TheHSC5094isaNPNSiliconTransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Features •LowNoiseandHighGain:NF=1.4dB,Ga=12dB@VCE=2V,Ic=4.2mA,f=0.9GHz •HighPowerGain:MAG=13.5dB@VCE=5V,Ic=4.5mA,f=0.9GHz Applications •Lownoiseandhighga

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

Aluminium Housed Power Resistors

TEConnectivityaretheleadingEuropeansupplierofstandardandcustomdesignedaluminiumhousedresistorsforgeneral-purposeuse,powersupplies,powergenerationandthetractionindustry.TheHSisarangeofextremelystable,highqualitywirewoundresistorscapableofdissipatinghighpow

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC945isdesignedforusingdriverstageofAPamplifierandlowspeedswitchingapplications.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHSC945isdesignedforusingdriverstageofAFamplifierandlowspeedswitchingapplications.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

HSC产品属性

  • 类型

    描述

  • 型号

    HSC

  • 制造商

    HONEYWELL

  • 制造商全称

    Honeywell Solid State Electronics Center

  • 功能描述

    TruStability silicon Pressure

  • Sensors

    HSC Series-High Accuracy +-1% total Error band,Analog output,SIP,1 psi to 150 psi

更新时间:2025-7-28 20:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
25+
SOD523
32000
RENESAS/瑞萨全新特价HSC278TRF-E即刻询购立享优惠#长期有货
ARLITECH
24+
NA/
645
优势代理渠道,原装正品,可全系列订货开增值税票
ARLITECH
24+
0603
20000
全新原装数量均有多电话咨询
HY-SINCERITY
1190
全新原装!优势库存热卖中!
ALPS
2430+
LGA
8540
只做原装正品假一赔十为客户做到零风险!!
214
24+
42*27*12
500
214所产品在售
AVAGOTECHNOLOGIES
24+
SMD
600
“芯达集团”专营军工百分之百原装进口
HONEYWELL
sensorn
23+
6000
专业配单原装正品假一罚十
HONEYWELL
24+
SMD
750
代理原装现货,价格优势。
TE
4500
一级代理原装正品,可开原型号13

HSC芯片相关品牌

  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • OTTO
  • Philips
  • WALSIN
  • WURTH

HSC数据表相关新闻

  • HSM4204

    HSM4204,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.

    2021-2-16
  • HSF-48-19-BF

    HSF系列散热器/风扇组合 Wakefield-Vette的散热器/风扇组合设计用于许多行业的气流应用

    2020-3-10
  • HSMG-C170进口原装正品现货假一罚十

    HSMG-C170进口原装正品现货假一罚十尽在-宇集芯电子

    2019-8-2
  • HS9-4424BRH-双抗辐射,非逆变电源的MOSFET驱动器

    双抗辐射,非反相功率MOSFET驱动器辐射硬化的Hs4424RH和HS-4424BRH是非相,双,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协,4

    2013-3-2
  • HS9-4423BRH-抗辐射双通道,逆变电源的MOSFET驱动器

    抗辐射双通道,逆变电源MOSFET驱动器辐射硬化的Hs4423RH和房协,4423BRH是反转,双通道,单片高速MOSFET驱动器设计的高电流转换为TTL电平信号在电压高达18V的输出。这些设备的投入是TTL兼容,可我们的房协直接驱动,1825ARH脉宽调制器或我们的加勒比国家联盟/青蒿素和HCS/HCTS会类型的逻辑器件。快速崛起时间和高电流输出允许非常快速控制高功率MOSFET栅极电容,像我们的抗辐射FS055,在高频率的应用。高电流输出减少功率损耗通过快速的MOSFET栅极充电和放电电容。输出级采用了低电压锁出电路,放进一个三态模式输出当电源电压下降为低于10V房协

    2013-3-2
  • HS9S-117RH-8-抗辐射可调节正电压稳压器

    硬化HS-117RH辐射是一种积极的调节电压线性稳压器高达40VDC的经营能力。该电压调节从1.2V至37V的两个外部电阻。该设备的采购能够从50mA至1.25APEAK(分钟)。保护是由片上热关断和输出电流限制电路。Intersil的HS-117RH比其他行业的优势标准类型的电路,以减少注册成立在设备的辐射和温度稳定性的影响。低剂量率可忽略不计的灵敏度达到通过使用垂直晶体管几何。与介质隔离Intersil的构造拉德硬硅门(RSG)的过程中,HS-117RH都难单事件闭锁,并经过特别设计,提供高度可靠的性能在恶劣的辐射环境。特点•电甄

    2013-1-28