500V N-Channel Planar MOSFET

Features RDSON=0.18Ω @Vgs=10V, Id=12.5A Ultra Low gate Charge(typical 80nC) Low Crss (typical 22pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (

25A 500V N-channel enhanced field effect transistor

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This new power MOSFET realized the low switching loss and low switching noise

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THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs

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Power switch circuit of adaptor and charger.

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