700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10A, 700V N-CHANNEL POWER MOSFET

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Simple Drive Requirements

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

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N-CHANNEL JUNCTION FET

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