封装/外壳：16-VQFN 裸露焊盘 包装：托盘 描述：RF ATTENUATOR 31.5DB 50OHM 16QFN RF/IF，射频/中频和 RFID 衰减器

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

N and P-Channel Enhancement Mode Power MOSFET

Description The 4611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON)

VHB?줥apes

文件：641.8 Kbytes Page：10 Pages

Relampable Indicator Light

文件：92.43 Kbytes Page：1 Pages

Networks

文件：61.83 Kbytes Page：1 Pages