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HN678

包装:散装 描述:HDSS NEUTRAL LUG KIT 600V 1200A 连接器,互连器件 矩形连接器

SIEMENS

西门子

HN678

开关配件/盖帽

SIEMENS

西门子

包装:散装 描述:HDSS 200N LUG KIT 600V 600A SERI 连接器,互连器件 矩形连接器

SIEMENS

西门子

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1690 A Surge current 27 kA

POSEICO

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

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