丝印代码：HMS8N60；N-Channel Super Junction Power MOSFET ?

文件：981.67 Kbytes Page：9 Pages

丝印代码：HMS8N60D；N-Channel Super Junction Power MOSFET ?

文件：981.67 Kbytes Page：9 Pages

丝印代码：HMS8N60F；N-Channel Super Junction Power MOSFET ?

文件：981.67 Kbytes Page：9 Pages

丝印代码：HMS8N60I；N-Channel Super Junction Power MOSFET ?

文件：763.09 Kbytes Page：7 Pages

丝印代码：HMS8N60K；N-Channel Super Junction Power MOSFET ?

文件：763.09 Kbytes Page：7 Pages

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages