Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION\nThe HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as\n131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which\nconstantly monitors Vcc for an out-of-tolerance condition. W Access time : 70, 85, 120, 150ns\nHigh-density design : 256KByte Design\nBattery internally isolated until power is applied\nIndustry-standard 40-pin 128K x 16 pinout\nUnlimited write cycles\nData retention in the absence of VCC\n10-years minimum data retention in absence of power\nAutomatic write-p;

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance cond

Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V

GENERAL DESCRIPTION The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

8-bit Microcontroller with 128K Bytes In-System Programmable Flash

Overview The ATmega128 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. By executing powerful instructions in a single clock cycle, the ATmega128 achieves throughputs approaching 1 MIPS per MHz allowing the system designer to optimize power consumption versus

~8.5째 spot beam optimized for CREE XP-E

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