HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

4 引脚半节距微型扁平光电晶体耦合器

HMHA281、HMHA2801 系列包括一个砷化镓红外发光二极管，用以驱动紧凑型 4 引脚微型扁平封装中的硅光电晶体管。 引线间距为1.27mm。 • Compact 4−Pin Package: ♦2.4 mm Maximum Standoff Height ♦Half−Pitch Leads for Optimum Board Space Savings\n• Safety and Regulatory Approvals: ♦ UL1577, 3.750 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage\n• These Devices are Pb−Free and are RoHS Compliant;

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

HALF PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

DESCRIPTION The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm. The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inver

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER

DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500