GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

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封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP GP 9-14GHZ DIE 1=2PC RF/IF，射频/中频和 RFID 射频放大器

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER

集成功率检波器的GaAs pHEMT MMIC 2 W功率放大器，8 - 14 GHz

GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER WITH POWER DETECTOR

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封装/外壳：24-VQFN 裸露焊盘 包装：托盘 描述：IC RF AMP 8GHZ-14GHZ 24QFN RF/IF，射频/中频和 RFID 射频放大器

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA952 is designed for use in output stages of portable radio and cassette type tape recorder, general purpose applications.

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

SUBMINIATURE POWER RELAY

[AZETTILER] FEATURES • Subminiature size for high density packaging • Coil sensitivity to 116 mW • Extremely low cost • Coils to 24 VDC • Epoxy sealed for automatic wave soldering • 1 Amp, 3 Amp & 5 Amp contacts • Life expectancy to 10 million operations • UL, CUR file E43203

CONN PLUG USB3.0 MICRO USB B SLD

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EL Flowing Effect Wire with Inverter - Green 2.0 meter (6.5 ft)

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