集成VCO 的小数N分频PLL，采用SMT封装，3365 - 3,705 MHz

11.90 GHz to 18.30 GHz Quadband VCO

GENERAL DESCRIPTION The HMC8362 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband capabilities without compromising on phase noise performance. The device integrates four independent, narrow-band

11.90 GHz to 18.30 GHz Quadband VCO

GENERAL DESCRIPTION The HMC8362 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband capabilities without compromising on phase noise performance. The device integrates four independent, narrow-band

11.90 GHz to 18.30 GHz Quadband VCO

GENERAL DESCRIPTION The HMC8362 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband capabilities without compromising on phase noise performance. The device integrates four independent, narrow-band

FRACTIONAL-N PLL WITH INTEGRATED VCO

General Description The HMC836LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The PLL consists of an integrated low noise VCO with x2 output, an autocalibration subsystem for low voltage VCO tuning, a very low noise digital

11.90 GHz至18.30 GHz四频VCO

封装/外壳：40-VFQFN 裸露焊盘，CSP 功能：VCO 包装：托盘 描述：DRT DUAL BAND VCO 13 - 18.6 GHZ RF/IF，射频/中频和 RFID RF 其它 IC 和模块

18.10 GHz to 26.60 GHz Quadband VCO

文件：465.63 Kbytes Page：17 Pages

18.10 GHz至26.60 GHz四频VCO

18.10 GHz to 26.60 GHz Quadband VCO

文件：465.63 Kbytes Page：17 Pages

封装/外壳：40-VFQFN 裸露焊盘，CSP 功能：VCO 包装：托盘 描述：CUSTOM DRT QUAD BAND VCO 18.2- 2 RF/IF，射频/中频和 RFID RF 其它 IC 和模块

18.10 GHz to 26.60 GHz Quadband VCO

文件：465.63 Kbytes Page：17 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 3365 - 3705 MHz

文件：1.00704 Mbytes Page：10 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 3365 - 3705 MHz

文件：498.06 Kbytes Page：10 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 3365 - 3705 MHz

文件：498.06 Kbytes Page：10 Pages

FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 3365 - 3705 MHz

文件：1.00704 Mbytes Page：10 Pages

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

文件：1.43798 Mbytes Page：80 Pages