InGaP HBT有源偏置MMIC放大器，0.7 - 2.8 GHz

2 GHz至18 GHz限幅放大器模块

Field replaceable SMA connectors

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InGaP HBT GAIN BLOCK MMIC AMPLIFIER

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InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 - 2.8 GHz

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InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 - 2.8 GHz

文件：1.18907 Mbytes Page：16 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP GP 700MHZ-2.8GHZ SOT89 RF/IF，射频/中频和 RFID 射频放大器

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 - 2.8 GHz

文件：1.18907 Mbytes Page：16 Pages

封装/外壳：TO-243AA 包装：带 描述：IC RF AMP GP 700MHZ-2.8GHZ SOT89 RF/IF，射频/中频和 RFID 射频放大器

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • Hi

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 8A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Low Saturation Voltage E.g. 10mv Typ.

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters

Integrated Circuit Stereo Multiplex Decoder

Description: The NTE789, a monolithic silicon integrated circuit, is a stereo multiplex decoder intended for FM multiplex systems. This stereo multiplex decoder requires only one low–inductance tuning coil (requires only one adjustment for complete alignment), provides automatic stereo switc

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 25 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers