PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 8A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Low Saturation Voltage E.g. 10mv Typ.

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features • BVCEO > -25V • IC = -3A high Continuous Current • ICM = -8A Peak Pulse Current • Low saturation voltage VCE(sat)

PNP Silicon Power Switching Transistor

Features ● 2W power dissipation. ● 8A peak pulse current. ● Excellent HFE characteristics up to 10 Amps. ● Extremely low saturation voltage E.g. 10mv Typ.

25V PNP MEDIUM POWER TRANSISTOR IN SOT89

文件：379.72 Kbytes Page：7 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 25V 3A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • Hi

Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low-current, high speed switching applications. • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250 • LowCollector-Emitter Satura