宽带4 GS/s采样保持放大器，DC - 5 GHz

WIDEBAND 4 GS/s TRACK-AND-HOLD AMPLIFIER

文件：1.0541 Mbytes Page：14 Pages

封装/外壳：24-TFQFN 裸露焊盘 包装：托盘 描述：IC RF AMP GP 0HZ-5GHZ 24SMT RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：24-TFQFN 裸露焊盘 包装：托盘 描述：IC RF AMP 0HZ-5GHZ 24SMT RF/IF，射频/中频和 RFID 射频放大器

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature