x2有源倍频器芯片，19 - 25 GHz Fout

HMC448是一款采用GaAs PHEMT技术制造而成的x2有源宽带倍频器芯片。 由0 dBm信号驱动时，该倍频器在19至25 GHz范围内提供+11 dBm的典型输出功率。 在最高22 GHz的频率下，Fo和3Fo隔离大于22 dBc。 这款多速率倍频器可用于为40 Gbps系统生成半速率时钟，或者作为倍频链的一部分，生成全速率40 Gbps时钟。 \n\n HMC448适合在点对点和VSAT无线电的LO倍频链中使用，与传统方法相比，可以减少器件数量。 100 kHz偏置时的低加性SSB相位噪声为-135 dBc/Hz，有助于保持良好的系统噪声性能。 数据均采用50 ohm测试夹具 • 输出功率： +11 dBm \n• 宽输入功率范围： -4至+6 dBm \n• Fo，3Fo隔离： >20 dBc（Fout = 20 GHz时）;

N-CHANNEL ENHANCEMENT MODE

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 1

Damper diode

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuits

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION