2 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz

General Description The HMC290 & HMC290E are broadband 2 - bit positive control GaAs IC digital attenuators in 6 lead SOT26 surface mount plastic packages. Covering 0.7 to 4 GHz, the insertion loss is typically less than 0.7 dB. The attenuator bit values are 2 (LSB) and 4 dB for a total atten

2 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz

General Description The HMC290 & HMC290E are broadband 2 - bit positive control GaAs IC digital attenuators in 6 lead SOT26 surface mount plastic packages. Covering 0.7 to 4 GHz, the insertion loss is typically less than 0.7 dB. The attenuator bit values are 2 (LSB) and 4 dB for a total atten

2 dB LSB 2位数字衰减器，采用SMT封装，0.7 - 4.0 GHz

HMC290(E)是一款宽带2位正控制GaAs IC数字衰减器，采用6引脚SOT26表贴塑料封装。 工作频率范围为0.7至4 GHz，典型插入损耗小于0.7 dB。 对于6 dB的总衰减，衰减器位值为2 (LSB)和4 dB。 在±0.2 dB（典型值）时，精度最佳且IIP3高达+52 dBm。 两位控制电压输入在0和+3至+5 V之间切换，用于选择每个衰减状态（每个小于50 uA）。 需通过外部5K Ohm电阻施加+3至+5 V的单Vdd偏置。 占用面积小于9 mm²，这是一款最小的2位数字衰减器。 \n\n应用 \n\n• 蜂窝\n\n• PCS, ISM, MMDS \n\n• WLL手 • 2 dB LSB步进至6 dB \n\n• 每位单正电压控制;

封装/外壳：SOT-23-6 包装：带 描述：RF ATTENUATOR 2DB-6DB SOT23-6 RF/IF，射频/中频和 RFID 衰减器

2 dB LSB GaAs MMIC 2-BIT DIGITAL

文件：158.95 Kbytes Page：4 Pages

2 dB LSB GaAs MMIC 2-BIT DIGITAL

文件：158.95 Kbytes Page：4 Pages

2 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz

General Description The HMC290 & HMC290E are broadband 2 - bit positive control GaAs IC digital attenuators in 6 lead SOT26 surface mount plastic packages. Covering 0.7 to 4 GHz, the insertion loss is typically less than 0.7 dB. The attenuator bit values are 2 (LSB) and 4 dB for a total atten

2 dB LSB GaAs MMIC 2-BIT DIGITAL

文件：158.95 Kbytes Page：4 Pages

2 dB LSB GaAs MMIC 2-BIT DIGITAL

文件：158.95 Kbytes Page：4 Pages

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF ATTENUATOR 2DB-6DB SOT23-6 RF/IF，射频/中频和 RFID 衰减器

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

Burst Mode Memory Controller

文件：318.78 Kbytes Page：20 Pages