GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz

文件：192.53 Kbytes Page：6 Pages

GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz

文件：192.53 Kbytes Page：6 Pages

GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz

文件：465.25 Kbytes Page：6 Pages

SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz

文件：170.68 Kbytes Page：8 Pages

SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz

文件：243.71 Kbytes Page：8 Pages

SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz

SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz

文件：243.71 Kbytes Page：8 Pages

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Speed Differential Comparators

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