次谐波混频器芯片，14 GHz至21 GHz

HMC258器件属于次谐波(×2)单端单芯片微波集成电路(MMIC)混频器，其集成的LO放大器可用作上变频器或下变频器。 HMC258器件提供芯片(HMC258)、SMT无引脚陶瓷封装(HMC258LC3B)和SMT无引脚芯片载体封装(HMC258LM3)。 HMC258采用GaAs金属半导体场效应晶体管(MESFET)技术制造而成，整体芯片面积小至0.9 mm2。 2LO至RF隔离性能出色，无需额外滤波。 LO放大器采用单偏置（5 V）双级设计，仅需0 dBm的驱动。 \n\nHMC258芯片的低LO驱动和次谐波特性可以实现要求较低的振荡器设计。 所有数据均存储在位于50 Ω测试夹具中的芯片 • 集成本振(LO)放大器： 0 dBm驱动(HMC258) \n\n• 集成LO放大器： 0 dBm输入（HMC258LC3B和HMC258LM3）\n\n• 次谐波(×2) LO \n\n• 高2LO至RF隔离\nHMC258: 40 dB\nHMC258LC2B: >45 dB\nHMC258LM3: >40 dB;

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz

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GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz

文件：203.97 Kbytes Page：6 Pages

Microwave Point-to-Point Radios

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封装/外壳：模具 包装：散装 描述：IC MIXER SUB-HARMONIC DIE RF/IF，射频/中频和 RFID 射频混频器

GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz

General Description The HMC258LC3B is a 14.5 - 19.5 GHz surface mount sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifi er in a SMT leadless ceramic package. At 45 dB the 2LO to RF isolation eliminates the need for additional fi ltering. The LO amplifi er is a single bias (+5V

GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz

General Description The HMC258LC3B is a 14.5 - 19.5 GHz surface mount sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifi er in a SMT leadless ceramic package. At 45 dB the 2LO to RF isolation eliminates the need for additional fi ltering. The LO amplifi er is a single bias (+5V

GaAs MMIC SUB-HARMONIC SMT MIXER, 14.5 - 19.5 GHz

General Description The HMC258LC3B is a 14.5 - 19.5 GHz surface mount sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifi er in a SMT leadless ceramic package. At 45 dB the 2LO to RF isolation eliminates the need for additional fi ltering. The LO amplifi er is a single bias (+5V

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

General Description The HMC258LM3 is a 14 - 20 GHz surface mount sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier in a SMT leadless chip carrier package. The 2LO to RF isolation is an excellent 40 dB, eliminating the need for additional filtering. The LO amplifier is a sing

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz

文件：254.47 Kbytes Page：6 Pages

封装/外壳：12-VFCQFN 裸露焊盘 包装：散装 描述：IC MIXER SUB-HARMONIC 12SMD RF/IF，射频/中频和 RFID 射频混频器

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

文件：223.28 Kbytes Page：8 Pages

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

文件：313.06 Kbytes Page：8 Pages

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

文件：313.06 Kbytes Page：8 Pages

GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz

文件：223.28 Kbytes Page：8 Pages

Thyristors logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/VEE, and single supply or split supply operation. The LM358 series is equivalent to one−half of an LM324. These

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation