SP6T非反射开关，采用SMT封装，DC - 3 GHz

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3.0 GHz

General Description The HMC252QS24 & HMC252QS24E are low-cost non-refl ective SP6T switches in 24-lead QSOP packages featuring wideband operation from DC to 3.0 GHz. The switch offers a single positive bias and true TTL/CMOS compatibility. A 3:6 decoder is integrated on the switch requiring on

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3.0 GHz

General Description The HMC252QS24 & HMC252QS24E are low-cost non-refl ective SP6T switches in 24-lead QSOP packages featuring wideband operation from DC to 3.0 GHz. The switch offers a single positive bias and true TTL/CMOS compatibility. A 3:6 decoder is integrated on the switch requiring on

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3.0 GHz

General Description The HMC252QS24 & HMC252QS24E are low-cost non-refl ective SP6T switches in 24-lead QSOP packages featuring wideband operation from DC to 3.0 GHz. The switch offers a single positive bias and true TTL/CMOS compatibility. A 3:6 decoder is integrated on the switch requiring on

GaAs MMIC SP6T非反射式开关，DC - 3 GHz

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3 GHz

文件：601.18 Kbytes Page：4 Pages

封装/外壳：24-SSOP（0.154"，3.90mm 宽） 包装：托盘 描述：IC RF SWITCH SP6T 2.5GHZ 24QSOP RF/IF，射频/中频和 RFID 射频开关

封装/外壳：24-SSOP（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SP6T 24QSOP RF/IF，射频/中频和 RFID 射频开关

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3.0 GHz

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3 GHz

文件：173.26 Kbytes Page：4 Pages

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3 GHz

文件：173.26 Kbytes Page：4 Pages

GaAs MMIC SP6T NON-REFLECTIVE SWITCH, DC - 3 GHz

文件：173.26 Kbytes Page：4 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

文件：31.46 Kbytes Page：1 Pages