SPDT高隔离开关SMT，DC - 3 GHz

丝印代码：H194A；GaAs MMIC SPDT SWITCH DC - 3 GHz

文件：297.71 Kbytes Page：4 Pages

丝印代码：H194A；GaAs MMIC SPDT SWITCH DC - 3 GHz

文件：297.71 Kbytes Page：4 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ 8MSOP RF/IF，射频/中频和 RFID 射频开关

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting resistors for an

Surface Mount Chip LEDs

Description The MSL-194B, a BLUE source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes InGaN on SiC LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pane

Surface Mount Chip LEDs

Description The MSL-194DR, a RED source Chip LED device, is designed in an indnstry standard package suitable for SMT assembly method. It utilizes AlGaAs on GaAs LED chip technology and water clear epoxy package. Features Push-Button Backlighting LCD Backlighting Symbol Backlighting Front Pa

Silicon NPN Transistor Audio Power Amplifier

Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .

LM194/LM394 Supermatch Pair

文件：221.51 Kbytes Page：10 Pages