NPN EPITAXIAL PLANAR TRANSISTOR

Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation (PD: 225mW) • Complementary to HMBT9015 • High hFE and Good Linearity

NPN EPITAXIAL PLANAR TRANSISTOR

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015