General purpose diodes fabricated in planar technology

Description The HMBD2003CS are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package. Features • Small plastic SMD package • Switching speed: max. 50 nS • General application: Continuous reverse voltage: Max. 200 V Repetitive pe

General purpose diodes fabricated in planar technology

General purpose diodes fabricated in planar technology

Description The HMBD2003CS are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package. Features • Small plastic SMD package • Switching speed: max. 50 nS • General application: Continuous reverse voltage: Max. 200 V Repetitive pe

General purpose diodes fabricated in planar technology

Description The HMBD2003CS are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package. Features • Small plastic SMD package • Switching speed: max. 50 nS • General application: Continuous reverse voltage: Max. 200 V Repetitive pe

丝印代码：A3；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages