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HM65价格
参考价格：￥17.0469
型号：HM65-8R2LFTR13 品牌：TT 备注：这里有HM65多少钱，2024年最近7天走势，今日出价，今日竞价，HM65批发/采购报价，HM65行情走势销售排行榜，HM65报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HM65 | High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 |  |   |
HM65 | High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 |  | |
HM65 | High Current Low Profile Surface Mount Inductors 文件：342 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 |  | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh Description TheHitachiHM658512AisaCMOSpseudostaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.8µmHi-CMOSprocesstechnology. Features •Single5V(±10) •Highspeed -AccesstimeCEaccesstime:70/80/ | HitachiHitachi, Ltd. 日立公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors FeaturesandBenefits ●OperatingTemperatureRange-40°Cto+130°C ●OperatingFrequencyUpto3MHz ●RoHSCompliant | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | | |
High Current Low Profile Surface Mount Inductors HighCurrentLowProfileSurfaceMountInductors •OperatingTemperatureRange-40°Cto+130°C •AmbientTemperature,Maximum80°C •InsulationSystemClassF,155°C | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | | |
HM65产品属性
- 类型
描述
- 型号
HM65
- 制造商
BITECH
- 制造商全称
Bi technologies
- 功能描述
High Current Low Profile Surface Mount Inductors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
2016+ |
SOP |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HIT |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
HIT |
2020+ |
DIP |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
HITACHI/日立 |
22+ |
SOP32 |
100000 |
代理渠道/只做原装/可含税 |
|||
HIT |
23+ |
DIP28 |
20000 |
原厂原装正品现货 |
|||
MIS |
20+ |
DIP18 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
BI |
1948+ |
SMD |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
HITACHI |
18+ |
SOP |
16013 |
全新原装现货,可出样品,可开增值税发票 |
|||
DLZ |
22+ |
SOP28 |
354000 |
||||
HIT |
21+ |
SOP32P |
56000 |
公司进口原装现货 批量特价支持 |
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- HM42-20002LFTR
- HM42-20001LFTR
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2020-3-27HM5116400CS6Z
HM5116400CS6Z
2019-11-1HMA121CR3-全间距微型扁平封装4针光耦合器
HMA121CR3-全间距微型扁平封装4针光耦合器HMA124，HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接，驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列，HMA2701系列，HMA124
2012-11-7
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