型号 功能描述 生产厂家 企业 LOGO 操作
HM6207H

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ¾ Operation: 300 mW (typ) ¾ Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

HitachiHitachi Semiconductor

日立日立公司

Dual Laser Driver Oscillator

Dual Laser Driver Oscillator The EL6207 is a dual push-pull oscillator used to reduce laser noise. It is optimized for 350MHz operation, allowing reduced concern for harmonic EMI. It uses the standard interface to existing ROM controllers. The frequency and amplitude are each set with a separate

Intersil

Multi-Conductor Cables 24AWG 7PR FOIL SHLD 500 FT SPOOL SLATE

文件:125.45 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

LTE Band 7 Duplexer with Balanced Rx Port

文件:668.82 Kbytes Page:15 Pages

AVAGO

安华高

LTE Band 7 Duplexer with Balanced Rx Port

文件:668.82 Kbytes Page:15 Pages

BOARDCOM

博通

Bootstrap operation by floating high side driver

文件:1.17764 Mbytes Page:30 Pages

ROHM

罗姆

HM6207H产品属性

  • 类型

    描述

  • 型号

    HM6207H

  • 功能描述

    x1 SRAM

更新时间:2025-9-28 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
3350
原装现货,当天可交货,原型号开票
HIT
2016+
DIP24
3900
只做原装,假一罚十,公司可开17%增值税发票!
HIT
00+
SOP24
3300
全新原装进口自己库存优势
HITACHI/日立
25+
DIP24
58788
百分百原装现货 实单必成 欢迎询价
HIT
24+
DIP24
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
HITACHI
02+
DIP24
1105
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI/日立
25+
SOJ24
32360
HITACHI/日立全新特价HM6207HJP-25即刻询购立享优惠#长期有货
HITACHI/日立
2450+
SOJ24
8850
只做原装正品假一赔十为客户做到零风险!!
2023+
6600
进口原装现货
2023+
5800
进口原装,现货热卖

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