| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM1207E | 丝印代码:0615;Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET 文件:903.13 Kbytes Page:6 Pages | HMSEMI 华之美半导体 | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, | POLYFET | |||
3/ 6/ 9/ 12 / 15 / 18 VOICE ROM Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile | MOSEL 茂矽电子 | |||
FOR LCD TVS, PIF AND SIF SYSTEM FOR LCD TVS, PIF AND SIF SYSTEM FEATURES ● PIF circuit • High input sensitivity • 3-stage variable-gain PIF amplifier • Output with black noise inverter (TA8805F) • Output without black noise inverter (TA1207F) • High-speed response peak AGC with dual time constant | TOSHIBA 东芝 | |||
130 MHz/85 MHz RGB Video Amplifier System with Blanking 文件:435.35 Kbytes Page:24 Pages | NSC 国半 | |||
130 MHz/85 MHz RGB Video Amplifier System with Blanking 文件:435.35 Kbytes Page:24 Pages | NSC 国半 |
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2012-11-7
DdatasheetPDF页码索引
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