N-Channel Enhancement Mode Power MOSFET

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N沟道中压大电流MOS(100V以下)

High density cell design for ultra low Rdson

文件：435.02 Kbytes Page：6 Pages

N沟道中压大电流MOS(100V以下)

N沟道中压大电流MOS(100V以下)

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

N-Channel 30-V (D-S) MOSFET

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90A竊?0V N-CHANNEL MOSFET

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