N-Channel Enhancement Mode Field Effect Transistor

General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment Features • 5.5A, 400V, RDS(on)

400V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 18 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V ❐

场效应管

400V N-Channel MOSFET

Features ❐ Originative New Design ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ 100 Avalanche Tested ❐ RoHS Compliant

Superior Avalanche Rugged Technology

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 17 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.75 Ω (Typ.) @VGS=10V ❐

MOSFET

MOSFET

Superior Avalanche Rugged Technology

文件：208.41 Kbytes Page：8 Pages

6A 400V N-channel Enhancement Mode Power MOSFET

文件：1.76217 Mbytes Page：12 Pages

3M??700-Series SMP Products

文件：499.34 Kbytes Page：5 Pages

700-Series SMP Products:

文件：499.34 Kbytes Page：5 Pages

GROMMETS , BUSHINGS

文件：362.45 Kbytes Page：1 Pages

6Amps竊?00V N-CHANNEL MOSFET

文件：280.71 Kbytes Page：6 Pages