Superior Avalanche Rugged Technology

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 30 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V ❐

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

场效应管

5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-A

Fast Switching Speed

DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier

isc N-Channel MOSFET Transistor

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5A, 800V N-CHANNEL POWER MOSFET

文件：178.37 Kbytes Page：5 Pages

800V N-Channel MOSFET -T

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