N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

场效应管

500V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 38 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.39 Ω (Typ.) @VGS=10V ❐

Superior Avalanche Rugged Technology

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 34 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 0.39 Ω (Typ.) @vGS=10V ❐

MOSFET

500V N-Channel MOSFET

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MOSFET

Drain Current ID= 13A@ TC=25C

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500V N-CHANNEL MOSFET

文件：167.88 Kbytes Page：6 Pages

500V N-CHANNEL MOSFET

文件：178.55 Kbytes Page：6 Pages

13A, 500V N-CHANNEL POWER MOSFET

文件：221.76 Kbytes Page：6 Pages

13A 500V N-channel enhanced field effect transistor

文件：849.02 Kbytes Page：5 Pages