450MHz, Low Power, Video Operational Amplifier with Programmable Output Disable

Features • Wide - 3dB Bandwidth (AV = +2) . . . . . . . . . . . . . 450MHz • Gain Flatness (To 250MHz) . . . . . . . . . . . . . . . . . . . 0.8dB • Very Fast Slew Rate (AV = +2) . . . . . . . . . . . . . . 1100V/µs • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . 1.7MΩ • Di

450MHz, Low Power, Video Operational Amplifier with Programmable Output Disable

Features • Wide - 3dB Bandwidth (AV = +2) . . . . . . . . . . . . . 450MHz • Gain Flatness (To 250MHz) . . . . . . . . . . . . . . . . . . . 0.8dB • Very Fast Slew Rate (AV = +2) . . . . . . . . . . . . . 1100V/s • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . 1.7M • Diff

450MHz, Low Power, Video Operational Amplifier with Programmable Output Disable

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PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat)67mΩ at 3A

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat)67mΩ at 3A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain

Low Collector Saturation Voltage Built-in Damper Diode at E-C

Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain