Quadruple exclusive-OR gate

DESCRIPTION The HEF4030B provides the positive quadruple exclusive-OR function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

Quad 2-input EXCLUSIVE-OR gate

1. General description The HEF4030B is a quad 2-input EXCLUSIVE-OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VDD. 2. Features and benefits • Wide supply voltage range from 3.0 V to 15.0 V • CMOS low power

Quad 2-input EXCLUSIVE-OR gate

Quad 2-input EXCLUSIVE-OR gate

Quad 2-input EXCLUSIVE-OR gate

1. General description The HEF4030B-Q100 is a quad 2-input EXCLUSIVE-OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VDD. This product has been qualified to the Automotive Electronics Council (AEC) standard Q1

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE XOR 4CH 2-INP 14SO 集成电路（IC） 门和反相器

Quad 2-input EXCLUSIVE-OR gate

Quad 2-input EXCLUSIVE-OR gate

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Quad 2-input EXCLUSIVE-OR gate

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE XOR 4CH 2-INP 14SO 集成电路（IC） 门和反相器

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res