Extremely low switching loss

文件：396.89 Kbytes Page：9 Pages

SJ MOSFET

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.52Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.52Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Extremely low switching loss

文件：396.89 Kbytes Page：9 Pages

Excellent stability and uniformity

文件：201.32 Kbytes Page：7 Pages