Radiation Hardened 8-Bit Universal Shift Register; Three-State

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened 8-Bit Universal Shift Register; Three-State

Description The Intersil HCTS299MS is a Radiation Hardened 8-bit shift/ storage register with three-state bus interface capability. The register has four synchronous operating modes controlled by the two select inputs (S0, S1). The mode select, the serial data (DS0, DS7) and the parallel data (IO

Radiation Hardened 8-Bit Universal Shift Register; Three-State

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Radiation Hardened 8-Bit Universal Shift Register; Three-State

文件：279.4 Kbytes Page：12 Pages

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. FEATURES • Low threshold voltage • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • Battery powered applications e.g. cellular phones • Gen

SOFT RECOVERY PLASTIC RECTIFIER(VOLTAGE - 100 to 800 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

2.0 AMPS. FAST RECOVRY RECTIFIERS

Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters with MUX and Sample/Hold

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Precision Reference

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