COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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封装/外壳：6-SMD，无引线 包装：卷带（TR） 描述：TRANS NPN/PNP 50V/60V SMT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

封装/外壳：6-SMD，无引线 包装：卷带（TR） 描述：TRANS NPN/PNP 50V/60V SMT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 2.5 AMP, STANDARD AND FAST RECOVERY

Three Phase Bridges, 2.5 Amp, Standard and Fast Recovery FEATURES • Miniature Package • Recovery Time : to 500 ns • Surge Ratings : to 25 A • PIV : from 100 to 600 V • Controlled Avalanche Characteristics • Only Fused-in-Glass Diodes Used

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

Highly compliant

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Temperature Sensors Line Guide

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PUSHBUTTON SWITCHES - SNAP-ACTING

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