COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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封装/外壳：6-SMD，无引线 包装：卷带（TR） 描述：TRANS NPN/PNP 50V/60V SMT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

MOSFET N-CH 60V 200MA

MOSFET N-CH 60V 200MA

封装/外壳：6-SMD，无引线 包装：卷带（TR） 描述：TRANS NPN/PNP 50V/60V SMT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL)

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL)

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL)

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL)

0 to 700 kPa (0-100 psi) 60 mV FULL SCALE SPAN (TYPICAL) The MPX700 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied pressure. This standard, low cost, uncompensated sensor permits manufacturer