HCT Series - High Clearance and Creepage Distance Transformers

Features n Toroid core for high coupling and low radiation n Complies with IEC 60950-1, IEC 62368-1 and IEC 60664-1 n UL 62368-1 recognized, File No. E515965 (six models) n Reinforced insulation for working voltage of 800 Vrms, 1000 Vpeak n Designed for isolation power supplies using TI

Hex Inverter(High-Performance Silicon-Gate CMOS)

The SL74HCT04 may be used as a level converter for interfacing TTL or NMOS outputs to High-Speed CMOS inputs. The SL74HCT04 is identical in pinout to the LS/ALS04. ● TTL/NMOS-Compatible Input Levels ● Outputs Directly Interface to CMOS, NMOS, and TTL ● Operating Voltage Range: 4.5 to 5.5 V ●

Triple 3-Input NAND Gate(High-Performance Silicon-Gate CMOS)

Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS The SL74HCT10 is identical in pinout to the LS/ALS10. The SL74HCT10 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. • TTL/NMOS Compatible Input Levels • Outputs Directly Interface to C

Modular Convection Rework System

MRS-1100A Features
Digital display for repeatable temperature settings and profile control
Automatic control of the preheater for simple operation
Easy profile creation for operator repeatability
Integrated vacuum pickup for easy component removal
Hand held or tool holder mounted fo

Quad buffer/line driver; 3-state

3-to-8 line decoder/demultiplexer; inverting

GENERAL DESCRIPTION The 74HC/HCT138 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Demultiplexing capability • Multiple input enable for easy expansion • Ideal for memory

Dual 4-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT20 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT20 provide the 4-input NAND function. FEATURES • Output capability: standard • I

Digital Hot Air Pencil

Application The HCT2-200 was developed for very small surface mount component and package sizes (1206’s and smaller) and low board densities. For denser PCBA’s or applications with heavy copper planes, boards > 4 layers, or components larger than 5mm2, use of a Metcal preheater (PCT-100 series) m

Digital Hot Air Pencil

Application The HCT2-200 was developed for very small surface mount component and package sizes (1206’s and smaller) and low board densities. For denser PCBA’s or applications with heavy copper planes, boards > 4 layers, or components larger than 5mm2, use of a Metcal preheater (PCT-100 series) m

Digital Hot Air Pencil

Application The HCT2-200 was developed for very small surface mount component and package sizes (1206’s and smaller) and low board densities. For denser PCBA’s or applications with heavy copper planes, boards > 4 layers, or components larger than 5mm2, use of a Metcal preheater (PCT-100 series) m

Digital Hot Air Pencil

Application The HCT2-200 was developed for very small surface mount component and package sizes (1206’s and smaller) and low board densities. For denser PCBA’s or applications with heavy copper planes, boards > 4 layers, or components larger than 5mm2, use of a Metcal preheater (PCT-100 series) m

Octal 3-State Inverting Buffer/Line Driver/Line Receiver(High-Performance Silicon-Gate CMOS)

The SL74HCT240 is identical in pinout to the LS/ALS240. The SL74HCT240 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. This octal inverting buffer/line driver/line receiver is designed to be used with 3-state memory address drivers, clock drivers, an

Octal 3-State Noninverting Buffer/Line Driver/Line Receiver(High-Performance Silicon-Gate CMOS)

High-Performance Silicon-Gate CMOS The SL74HCT244 is identical in pinout to the LS/ALS244. The device may be used as a level converter for interfacing TTL or NMOS outputs to High-Speed CMOS inputs. The SL74HCT244 is an octal noninverting buffer/line driver/line receiver designed to be used

8-input multiplexer; 3-state

GENERAL DESCRIPTION The 74HC/HCT251 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • True and complement outputs • Both outputs are 3-state for further multiplexer e

8-bit addressable latch

DESCRIPTION The 74AHC/AHCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device c

OCTAL D-TYPE FLIP FLOP WITH CLEAR

DESCRIPTION The 74VHCT273A is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP WITH CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 170 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ COMPATIBLE

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High−Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device cons

Quad 2-Input OR Gate(High-Performance Silicon-Gate CMOS)

Quad 2-Input OR Gate High-Performance Silicon-Gate CMOS The SL74HCT32 may be used as a level converter for interfacing TTL or NMOS outputs to High-Speed CMOS inputs. The SL74HCT32 is identical in pinout to the LS/ALS32. • TTL/NMOS-Compatible Input Levels. • Outputs Directly Interface to CMO

Octal 3-State Noninverting Transparent Latch(High-Performance Silicon-Gate CMOS)

Octal 3-State Noninverting Transparent Latch High-Performance Silicon-Gate CMOS The SL74HCT373 may be used as a level converter for interfacing TTL or NMOS outputs to High-Speed CMOS inputs. The SL74HCT373 is identical in pinout to the LS/ALS373. The eight latches of the SL74HCT373 are transpar

Dual 4-bit serial-in/parallel-out shift register

GENERAL DESCRIPTION The 74HC/HCT4015 are high-speed Si-gate CMOS devices and are pin compatible with the “4015” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. FEATURES • Output capability: standard • ICCcategory: MSI

Quad bilateral switches

GENERAL DESCRIPTION The 74HC/HCT4016 are high-speed Si-gate CMOS devices and are pin compatible with the “4016” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT4016 have four independent analog switches (transmission gates). FEATURES •

Phase-locked-loop with VCO

GENERAL DESCRIPTION The 74HC/HCT4046A are high-speed Si-gate CMOS devices and are pin compatible with the “4046” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. FEATURES • Low power consumption • Centre frequency of up to 17 MHz (typ.) at VCC= 4.5

8-channel analog multiplexer/demultiplexer

GENERAL DESCRIPTION The 74HC/HCT4051 are high-speed Si-gate CMOS devices and are pin compatible with the “4051” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. FEATURES • Wide analog input voltage range:±5V. • Low “ON” resistance: 80Ω(typ.)

16-channel analog multiplexer/demultiplexer

GENERAL DESCRIPTION The 74HC/HCT4067 are high-speed Si-gate CMOS devices and are pin compatible with the “4067” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT4067 are 16-channel analog multiplexers/demultiplexers with four address inputs (S0 to S

BCD to 7-segment latch/decoder/driver

GENERAL DESCRIPTION The 74HC/HCT4511 are high-speed Si-gate CMOS devices and are pin compatible with “4511” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. FEATURES • Latch storage of BCD inputs • Blanking input • Lamp test input • Driving common cathode L

Dual retriggerable precision monostable multivibrator

GENERAL DESCRIPTION The 74HC/HCT4538 are high-speed Si-gate CMOS devices and are pin compatible with “4538” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. FEATURES • Separate reset inputs • Triggering from leading or trailing edge • Output capa

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

N- Channel En hance ment Mode MOS Transistor

[Optek Technology, Inc.] Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhance

N- Channel Enhancement Mode MOS Transis tor

Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Description: The HCT7000M is a high performance enhancement mode N‐channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characterisƟcs are similar to those of the JEDEC 2N7000. The pin‐out and footprint matches that of most enhancement mode MOS transistors

N-Channel Enhancement Mode MOS Transistor

Features: • 200 mA ID • Ultra small surface mount package • RDS(ON)

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

Dual Enhancement Mode MOSFET

Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeƟc ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are parƟcularly well matched for VDS, IDS(on)

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

Dual En hance ment Mode MOSFET

Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

HCT8 Series High Clearance and Creepage Transformer

Features n Full automation and compact size n High voltage isolation n Reinforced insulation for working voltage of 800 V n Basic insulation for working voltage of 1000 V n Creepage distance >8.0 mm n Clearance distance >8.0 mm n Overvoltage Category II, Pollution Degree 2, up to 2 km ab

Octal D-type transparent latch; 3-state

High Speed CMOS Logic Octal Transparent Latch, Three-State Output

OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS

High Speed CMOS Logic Octal Transparent Latch, Three-State Output