High Current Toroidal Inductors

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封装/外壳：非标准 包装：卷带（TR） 描述：FIXED IND 5.7UH 10.9A 7.5MOHM SM 电感器，线圈，扼流圈 固定电感器

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

N-Channel JFET Monolithic Dual

DESCRIPTION The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain ( > 6 mS typical), low leakage ( FEATURES • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical • Low Leakage . . . . . . . . . . . . . . . .

0.39 INCH (9.9MM) SINGLE DIGIT STICK DISPLAY

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