Radiation Hardened Octal D Flip-Flop

Description The Intersil HCS273MS is a Radiation Hardened octal D flip-flop, positive edge triggered, with reset. The HCS273MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS273MS is

Radiation Hardened Octal D Flip-Flop

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened Octal D Flip-Flop

OCTAL D-TYPE FLIP FLOP WITH CLEAR

DESCRIPTION The 74VHCT273A is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP WITH CLEAR fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 170 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ COMPATIBLE

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs

Octal D Flip-Flop with Common Clock and Reset with LSTTL-Compatible Inputs High–Performance Silicon–Gate CMOS The MC74HCT273A may be used as a level converter for interfacing TTL or NMOS outputs to High–Speed CMOS inputs. The HCT273A is identical in pinout to the LS273. This device c

Square Type

Square Type □ 5.0 mm × 5.0 mm Series

Square Type

□ 5.0 mm × 5.0 mm Series

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC