Low Input Current High Gain Split Darlington Optocouplers

Features ■ Low input current: 0.5mA ■ Superior CTR: 2000% ■ Superior CMR – 10 kV/μs ■ CTR guaranteed 0°C to 70°C ■ U.L. Recognized (file# E90700) ■ VDE 0884 recognized (file# 136616) – approval pending for HCPL0730/0731 ■ BSI recognized (file# 8661, 8662) – HCPL0700/0701 only Applica

Low Input Current High Gain Split Darlington Optocouplers

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8 引脚 SOIC 单沟道低电流，高增益分离达林顿输出光耦合器

Low Input Current High Gain Split Darlington Optocouplers

Features ■ Low input current: 0.5mA ■ Superior CTR: 2000% ■ Superior CMR – 10 kV/μs ■ CTR guaranteed 0°C to 70°C ■ U.L. Recognized (file# E90700) ■ VDE 0884 recognized (file# 136616) – approval pending for HCPL0730/0731 ■ BSI recognized (file# 8661, 8662) – HCPL0700/0701 only Applica

Low Input Current High Gain Split Darlington Optocouplers

Features ■ Low input current: 0.5mA ■ Superior CTR: 2000% ■ Superior CMR – 10 kV/μs ■ CTR guaranteed 0°C to 70°C ■ U.L. Recognized (file# E90700) ■ VDE 0884 recognized (file# 136616) – approval pending for HCPL0730/0731 ■ BSI recognized (file# 8661, 8662) – HCPL0700/0701 only Applica

Low Input Current High Gain Split Darlington Optocouplers

Features ■ Low input current: 0.5mA ■ Superior CTR: 2000% ■ Superior CMR – 10 kV/μs ■ CTR guaranteed 0°C to 70°C ■ U.L. Recognized (file# E90700) ■ VDE 0884 recognized (file# 136616) – approval pending for HCPL0730/0731 ■ BSI recognized (file# 8661, 8662) – HCPL0700/0701 only Applica

LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS

DESCRIPTION The HCPL-0700, HCPL-0701, HCPL-0730 and HCPL-0731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector housed in a compact 8-pin small outline package. The HCPL-0730 and HCPL-0731 devices have two channels per package for optimum mounti

Low Input Current, High Gain Optocouplers

Description These high gain series couplers use a Light Emitting Diode and an integrated high gain photodetector to provide extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage result in TTL compatible saturation voltages and high speed

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an