LP0701价格
参考价格：￥4.4908
型号：LP0701N3-G 品牌：Microchip 备注：这里有LP0701多少钱，2026年最近7天走势，今日出价，今日竞价，LP0701批发/采购报价，LP0701行情走势销售排行榜，LP0701报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX |   | |
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | |
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | |
LP0701 | P-Channel Enhancement-Mode LATERAL MOSFET These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient Ultra-low threshold\nHigh input impedance\nLow input capacitance\nFast switching speeds\nLow on-resistance\nFreedom from secondary breakdown\nLow input and output leakage; | MICROCHIP 微芯科技 | | |
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | |
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET 文件：597.6 Kbytes Page：6 Pages | SUTEX | | |
LP0701 | P-Channel Enhancement-Mode Lateral MOSFET 文件：540.01 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | |
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET Ultra low threshold\nHigh input impedance\nLow input capacitance\nFast switching speeds\nLow on resistance\nFreedom from secondary breakdown\nLow input and output leakage\nComplementary N- and P-channel devicesApplications\nLogic level interfaces\nSolid state relays\nBattery operated systems\nPhoto ; | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：540.01 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：597.6 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：540.01 Kbytes Page：14 Pages | MICROCHIP 微芯科技 | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：597.6 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Lateral MOSFET 文件：769.61 Kbytes Page：6 Pages | SUTEX | | ||
LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS DESCRIPTION The HCPL-0700, HCPL-0701, HCPL-0730 and HCPL-0731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector housed in a compact 8-pin small outline package. The HCPL-0730 and HCPL-0731 devices have two channels per package for optimum mounti | FAIRCHILD 仙童半导体 | | ||
Low Input Current, High Gain Optocouplers Description These high gain series couplers use a Light Emitting Diode and an integrated high gain photodetector to provide extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage result in TTL compatible saturation voltages and high speed | HP 安捷伦 | |
LP0701产品属性
- 类型
描述
- BVdss min (V)：
-16.5
- Rds (on) max (Ohms)：
1.5
- Vgs(th) max (V)：
-1.0
- CISSmax (pF)：
250
- Packages：
3\\TO-928\\SOIC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
Microchip |
24+ |
TO226-3 |
10000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MICROCHIP/微芯 |
25+ |
SOP8 |
20300 |
MICROCHIP/微芯原装特价LP0701LG-G即刻询购立享优惠#长期有货 |
|||
MICROCHIP/微芯 |
2450+ |
SOP-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
SUPERTEX |
24+ |
TO-92 |
4820 |
只做原装正品 |
|||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
SUPERTEX |
22+ |
SOP8 |
5000 |
只做原装鄙视假货15118075546 |
|||
Supertex |
25+ |
TO-92 |
30000 |
代理全新原装现货,价格优势 |
|||
SUPERTE |
25+ |
SOP8 |
2760 |
绝对原装公司现货!17年VIP信誉保证! |
LP0701规格书下载地址
LP0701参数引脚图相关
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LP0701数据表相关新闻
LOG112AIDR 原装现货 假一罚十
LOG112AIDR 原装现货 假一罚十
2023-10-30LOG114AIRGVR
LOG114AIRGVR
2023-4-26LOG104AID
LOG104AID
2022-4-15LP2535-1
原装现货 假一赔十
2020-11-6LP2902PWR
LP2902PWR
2020-8-26LP10.16/03/903.2SNORBX魏德米勒端子，深圳现货
只做原装，假一罚十，可开16%增值税票。主营：魏德米勒，TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-4-2
DdatasheetPDF页码索引
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