High Speed Digital Isolators

Description The HCPL-90xx and HCPL-09xx CMOS digital isolators feature high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives these devices a typical pulse width distortion of 2 ns, a typical propagation delay skew of 4 ns and 100

High Speed Digital Isolators 15 ns max. propagation delay

Description The HCPL-90xx and HCPL-09xx CMOS digital isolators feature high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives these devices a typical pulse width distortion of 2 ns, a typical propagation delay skew of 4 ns and 100

High Speed Digital Isolators

Description The HCPL-90xx and HCPL-09xx CMOS digital isolators feature high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives these devices a typical pulse width distortion of 2 ns, a typical propagation delay skew of 4 ns and 100

High Speed Digital Isolators

Description The HCPL-90xx and HCPL-09xx CMOS digital isolators feature high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives these devices a typical pulse width distortion of 2 ns, a typical propagation delay skew of 4 ns and 100

High Speed Digital Isolators

Description The HCPL-90xx and HCPL-09xx CMOS digital isolators feature high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives these devices a typical pulse width distortion of 2 ns, a typical propagation delay skew of 4 ns and 100

高速数字隔离器

High Speed Digital Isolators

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VHF variable capacitance diode

DESCRIPTION The BB901 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 APPLICATIONS • Electronic tuning in satellite tuners • Tunabl

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

5.0 mm Blue Series

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