Dual Channel, High Speed Optocouplers High density packaging

Description These dual channel optocoup lers contain a pair of light emitting diodes and integrated photo-detec tors with electrical insulation between input and output. Separate connection for the photodiode bias and output transistor collectors increase the speed up to a hundred times that of

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times

Single Channel, High Speed Optocouplers TTL compatible

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

单通道高速光电耦合器

HCNW136 二极管晶体管光电耦合器在 LED 和光检测器间使用绝缘层提供输入和输出间的电气绝缘。光二极管偏压和输出晶体管集电极的独立连接可以通过降低基极到集电极电容，将速度提高到传统光晶体管耦合器的百倍以上。这款单通道光电耦合器采用宽体封装供货产品适合 TTL/TTL应用，输入 LED 的 16mA TTL 吸入电流和 5.6kΩ 上拉电阻可以提供 1 个 TTL 逻辑负载的充足输出电流，顺向电流 IF = 6mA 时最低电流传输比 (CTR, Current Transfer Ratio) 为 19%。 ·VCM = 1,500V 时 15kV/µs 高共模抑制 (CMR) 能力 (HCPL-4503/ HCPL-0453)\n·高速 1Mb/s\n·兼容 TTL\n·提供 8-pin DIP、SO-8 和宽体封装选择\n·集电极开路输出\n·0°C 到 70°C 工作温度性能保证\n·安全规范认证：\n- UL1577 3,750V/1min，5,000V/1min (HCNW 器件和选择 020)\n- CSA\n- IEC/EN/DIN EN 60747-5-2 VIORM = 630Vpeak (选择 060)\n- IEC/EN/DIN EN 60747-5-2 VIORM = 1,;

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

Single Channel, High Speed Optocouplers

Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times th

封装/外壳：8-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：OPTOISOLATOR 5KV TRANS 8SMD 隔离器 光隔离器 - 晶体管，光电输出

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

2.5V REFERENCE DIODE

文件：108.67 Kbytes Page：8 Pages

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages