QUAD EXCLUSIVE-OR GATE

DESCRIPTION The HCC4030B (extended temperature range) and HCF4030B (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. ■ MEDIUM-SPEED OPERATION – tPHL = tPLH = 60ns (typ.) @ CL = 50pF and VDD

抗辐照四路独占或门

The HCC40xxx and HCC45xxx series are composed of high-voltage CMOS functions, offering a set of highly noise tolerant gates, Flip-Flops, multiplexers, counters, bus interfaces, and several other functions. The radiation hardness, single event latch-up (SEL), single event upset (SEU) immunity, and th • ESCC qualified \n• 18 V Absolute maximum ratings \n• 3 V to 15 V operating voltage \n• Hermetic packages \n• Rad-hard 100 krad (Si) TID \n• SEL immune up to 119 MeV.cm²/mg \n• SEU immune up to 119 MeV.cm²/mg \n• -55 °C to +125 °C temperature range \n• ESCC specification available on ESCC website f;

RadHardened high voltage complementary MOS logic series

文件：141.35 Kbytes Page：13 Pages

QUAD EXCLUSIVE-OR GATE

DESCRIPTION The HCC4030B (extended temperature range) and HCF4030B (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. ■ MEDIUM-SPEED OPERATION – tPHL = tPLH = 60ns (typ.) @ CL = 50pF and VDD

Rad-hard high voltage CMOS logic series

文件：303.47 Kbytes Page：24 Pages

Rad-hard high voltage CMOS logic series

文件：303.47 Kbytes Page：24 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res

KK Mini -2.50mm & 2.54mm Modular Interconnection System

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

CMOS Quad Exclusive-OR Gate

CMOS QUAD EXCLUSIVE-OR GATE

Quad EXCLUSIVE-OR Gate

CMOS QUAD EXCLUSIVE-OR GATE

CMOS QUAD EXCLUSIVE-OR GATE

Quad EXCLUSIVE-OR Gate

CMOS Quad Exclusive OR and Exclusive NOR Gates

CMOS Quad Exclusive-OR and Exclusive-NOR Gate

Quad 2-Input EXCLUSIVE-OR Gate

Quad 2-Input EXCLUSIVE-OR, NOR Gate

Quadruple exclusive-OR gate

Quadruple exclusive-OR gate

QUAD EXCLUSIVE - OR GATE

Quad Exclusive-OR Gate

QUAD EXCLUSIVE-OR GATE