| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HC132A | Quad 2-Input NAND Gate with Schmitt-Trigger Inputs High?뭁erformance Silicon?묰ate CMOS The MC74HC132A is identical in pinout to the LS132. The device inputs are compatible with standard CMOS outputs; with pull−up resistors, they are compatible with LSTTL outputs. The HC132A can be used to enhance noise immunity or to square up slowly changing waveforms. Features • Output Dri | ONSEMI 安森美半导体 | ||
Quad 2-Input NAND Gate with Schmitt-Trigger Inputs High?뭁erformance Silicon?묰ate CMOS The MC74HC132A is identical in pinout to the LS132. The device inputs are compatible with standard CMOS outputs; with pull−up resistors, they are compatible with LSTTL outputs. The HC132A can be used to enhance noise immunity or to square up slowly changing waveforms. Features • Output Dri | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(8.0A,60-100V,70W) PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS | MOSPEC 统懋 | |||
L-BAND SPDT SWITCH DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the | NEC 瑞萨 | |||
L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | |||
L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | |||
L-BAND DPDT MMIC SWITCH DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava | NEC 瑞萨 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
SOP-14 |
50000 |
全新原装正品现货,支持订货 |
|||
TI |
24+ |
SO-14 |
5 |
只做原装,欢迎询价,量大价优 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
24+ |
SMD |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST/意法 |
23+ |
SOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON.SEMI |
00/01+ |
SOP-14 |
1545 |
全新原装100真实现货供应 |
|||
TI |
25+ |
SO-14 |
5 |
全新现货 |
|||
MOTOROLA |
25+ |
SOP14 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ON |
23+ |
SOP14 |
355 |
全新原装正品现货,支持订货 |
|||
ONSEMI/安森美 |
24+ |
SSOP14 |
60000 |
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HC132A数据表相关新闻
HBZ221KBBCF0KR
HBZ221KBBCF0KR
2023-11-9HBN2444S6R CYSTECH
www.hfxcom.com
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ARM Cortex-M0+ 内核,宽电压1.8~5.5V,4KB RAM,32KB Flash.ARM Cortex-M0+ 内核,宽电压1.8~5.5V,4KB RAM,32KB Flash.ARM Cortex-M0+ 内核,宽电压1.8~5.5V,4KB RAM,32KB Flash.
2020-12-14HBT有源偏置增益块SBB3089Z原装现货
深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
2019-12-3
DdatasheetPDF页码索引
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