HC03价格
参考价格:¥2.2385
型号:HC030WE1NF038B 品牌:TEConnectivity/Raychem 备注:这里有HC03多少钱,2026年最近7天走势,今日出价,今日竞价,HC03批发/采购报价,HC03行情走势销售排行榜,HC03报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03;SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs 1 Features • Wide Operating Voltage Range: 2 V to 6 V • Outputs Can Drive Up To 10 LSTTL Loads • Low Power Consumption, 20-μA Maximum ICC • Typical tpd = 8 ns at 5 V • ±4-mA Output Drive at 5 V • Low Input Current of 1 μA 2 Applications • NAND OD 3 Description This device contains fo | TI 德州仪器 | |||
丝印代码:HC03M;High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain Features • Buffered Inputs • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Output Pull-up to 10V • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads • Wide Opera | TI 德州仪器 | |||
丝印代码:HC03M;High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain Features • Buffered Inputs • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Output Pull-up to 10V • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads • Wide Opera | TI 德州仪器 | |||
丝印代码:HC03M;High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain Features • Buffered Inputs • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Output Pull-up to 10V • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads • Wide Opera | TI 德州仪器 | |||
丝印代码:HC03M;High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain Features • Buffered Inputs • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Output Pull-up to 10V • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads • Wide Opera | TI 德州仪器 | |||
插针式宽带大功率电桥 | YANTEL 研通 | |||
弹簧式接线端子 | AMPHENOL 安费诺 | |||
包装:散装 描述:TERM BLOCK 3POS 45DEG 3.7MM PCB 连接器,互连器件 线对板 | ETC 知名厂家 | ETC | ||
插针式宽带大功率电桥 | YANTEL 研通 | |||
Hybrid Coupler 3 dB, 90o 文件:1.56202 Mbytes Page:9 Pages | YANTEL 研通 | |||
包装:散装 描述:TERM BLOCK 3POS 45DEG 3.7MM PCB 连接器,互连器件 线对板 | ETC 知名厂家 | ETC |
HC03产品属性
- 类型
描述
- 功率(W):
150
- 尺寸长×宽(mm):
38.1×83.82
- 回波损耗(dB):
17.7
- 插入损耗(dB):
0.50
- 幅度平衡度 (dB):
±0.75
- 相位平衡度(°):
90±6.0
- 隔离度(dB):
16
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
西门子 |
24+ |
TO92 |
6600 |
||||
TI(德州仪器) |
26+ |
- |
3600 |
十二年VIP会员,诚信经营,原装库存·可零售! |
|||
TI |
23+ |
BGA |
5000 |
全新原装,支持实单,非诚勿扰 |
|||
TI |
23+ |
BGA |
3200 |
公司只做原装,可来电咨询 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
TI |
22+ |
BGA |
20000 |
公司只做原装 品质保障 |
|||
TI/德州仪器 |
24+ |
DSBGA |
28347 |
只做全新原装进口现货 |
|||
Texas Instruments |
26+ |
- |
18114 |
全新原装正品 |
|||
TI/德州仪器 |
2402+ |
QFN |
8324 |
原装正品!实单价优! |
HC03芯片相关品牌
HC03规格书下载地址
HC03参数引脚图相关
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